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MITSUBISHI RF POWER MODULE
M68741
SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO
OUTLINE DRAWING
45 42 2-R1.5
Dimensions in mm
BLOCK DIAGRAM
2
3
1 5 1 2 3 4
4 5
5
18 (36.5)
5
8.5 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY 3 VDD : DRAIN BIAS SUPPLY 4 PO : RF OUTPUT 5 GND: FIN
35
1.5 6.4 32.2
1.5
H50
ABSOLUTE MAXIMUM RATINGS (Tc=25C unless otherwise noted)
Symbol VDD VGG Pin PO TC (OP) Tstg Parameter Supply voltage Gate bias voltage Input power Output power Operation case temperature Storage temperature Conditions ZG=ZL=50 f=889-915MHz, ZG=ZL=50 f=889-915MHz, ZG=ZL=50 f=889-915MHz, ZG=ZL=50 Ratings 9 5.5 6 6 -30 to +100 -40 to +100 Unit V V mW W C C
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25C, ZG=ZL=50 unless otherwise noted)
Symbol f PO 2fO in T Frequency range Output power 2nd. harmonic Input VSWR Total efficiency Stability Load VSWR tolerance Parameter Test conditions Limits Min 889 3.8 Max 915 -30 4 Unit MHz W dBc % -
VDD=7.2V, VGG=5V, Pin=1mW, ZG=ZL=50 PO=3.8W(VGG=Adjust), VDD=7.2V, Pin=1mW, ZG=ZL=50 ZG=ZL=50, VDD=5-7.2V, Load VSWR <4:1 VDD=9V, Pin=1mW, PO=3.8W (VGG Adjust), ZL=20:1
30 No parasitic oscillation No degradation or destroy
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. 97
MITSUBISHI RF POWER MODULE
M68741
SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR, TOTAL EFFICIENCY VS. FREQUENCY 10 9 8 7 6 5 4 3 2 1 PO T in VDD=7.2V VGG=5V, Pin=1mW 100 90 80 70 60 50 40 30 20 10 0.1 -30 -25 -20 -15 -10 -5 0 5 1 10 1.0 10 OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 10.0 100 f=889MHz PO VDD=7.2V VGG=5V T
0 0 860 870 880 890 900 910 920 930 940 FREQUENCY f (MHz)
INPUT POWER Pin (dBm)
OUTPUT POWER, TOTAL EFFICIENCY VS. INPUT POWER 10.0 100 f=915MHz PO VDD=7.2V VGG=5V T
OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 6 60 f=889MHz PO VDD=7.2V 5 50 Pin=1mW 4 T 40 30 20 10 0 5.0
1.0
10
3 2 1
0.1 -30 -25 -20 -15 -10
-5
0
5
1 10
0 2.0
2.5
3.0
3.5
4.0
4.5
INPUT POWER Pin (dBm)
GATE SUPPLY VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY VS. GATE SUPPLY VOLTAGE 6 5 4 3 2 1 0 2.0 f=915MHz VDD=7.2V Pin=1mW PO 50 T 40 30 20 10 0 5.0 60 10 9 8 7 6 5 4 3 2 1 2.5 3.0 3.5 4.0 4.5
OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 50 f=889MHz VGG=5V Pin=1mW T 45 40 35 30 PO 25 20 15 10 5
0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 DRAIN SUPPLY VOLTAGE VDD (V)
GATE SUPPLY VOLTAGE VGG (V)
Nov. 97
MITSUBISHI RF POWER MODULE
M68741
SILICON MOS FET POWER AMPLIFIER, 889-915MHz, 3.8W, FM PORTABLE RADIO
OUTPUT POWER, TOTAL EFFICIENCY VS. DRAIN SUPPLY VOLTAGE 10 9 8 7 6 5 4 3 2 1 PO f=915MHz VGG=5V Pin=1mW T 50 45 40 35 30 25 20 15 10 5
0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 DRAIN SUPPLY VOLTAGE VDD (V)
Nov. 97

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